smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features n-channel sot-23 absolute maximum ratings ta = 25 parameter symbol rating unit drain-to-source voltage v dss 50 v gate-to-source voltage - continuous v gs 20 v drain current continuous @ t a =25 i d 200 ma pulsed drain current (tp 10 s) i dm 800 ma total power dissipation @ t a =25 p d 225 mw operating and storage temperature range t j ,t stg -55to150 thermal resistance,junction-to-ambient r ja 556 /w maximum lead temperature for soldering purposes, for 10 seconds t l 260 1gate 2 source 3drain 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors KSS138 smd type ic smd type mosfet smd type smd type smd type ic smd type transistors product specification
smd type transistors marking marking j1 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = 250 a 50 v zero gate voltage drain current v ds =25v,v gs =0 0.1 a v ds =50v,v gs =0 0.5 a gate-source leakage current i gss v gs = 20 v, v ds =0 0.1 a gate-source threshold voltage * v gs(th) v ds =v gs ,i d = 1.0 ma 0.5 1.5 v static drain-to-source on-rresistance * v gs =2.75v,i d <200ma,t a =-40to +85 5.6 10 v gs =5.0v,i d = 200 ma 3.5 forward transconductance * g fs v ds =25v,i d = 200 ma, f = 1.0 khz 100 mmhos input capacitance ciss 40 50 pf output capacitance coss 12 25 pf transfer capacitance crss 3.5 5 pf turn-on delay time t d(on) 20 ns turn-off delay time t d(off) 20 ns *pulsewidth 300 s, duty cycle 2%. v ds =25v,v gs =0,f=1mhz v dd =30v,i d =0.2a i dss r ds(on) KSS138 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type mosfet smd type smd type smd type ic smd type transistors product specification
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